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| Power Transistors 2SC4898 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q q q 15.00.5 9.90.3 3.00.5 4.60.2 2.90.2 High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) 3.20.1 13.70.2 4.20.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO ICP IC PC Tj Tstg 1.40.2 1.60.2 0.80.1 (TC=25C) Ratings 1000 500 10 5 40 2 150 -55 to +150 Unit V V A A W C C 2.60.1 0.550.15 1 2 2.540.3 3 5.080.5 1:Base 2:Collector 3:Emitter TO-220D Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25C) Symbol ICBO IEBO hFE VCE(sat) fT ton tstg tf Conditions VCB = 1000V, IE = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 1A IC = 3A, IB = 0.6A VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 0.6A, IB2 = - 0.6A, VCC = 250V 8 1.5 3 1.0 20 min typ max 100 100 40 1 V MHz s s s Unit A A 1 Power Transistors IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 10 TC=25C 9 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 IC/IB=5 TC=25C 2SC4898 VCE(sat) -- IC 1000 hFE -- IC TC=25C VCE=5V 300 Collector current IC (A) 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 IB=0.7A 0.6A 0.5A 0.4A 0.3A 0.2A 0.1A Forward current transfer ratio hFE 10 100 30 10 3 0.1 0.3 1 3 1 0.01 0.03 0.1 0.3 1 3 10 Collector to emitter voltage VCE (V) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 Area of safe operation, reverse bias ASO 6 IC/IB=5 IB1=-IB2 Lcoil=100H TC=25C Collector current IC (A) IC 1 10ms 1ms Collector current IC (A) 10 ICP t=0.5ms 5 4 1s 0.1 3 2 0.01 Non repetitive pulse TC=25C 1 3 10 30 100 300 1000 1 <1mA 0 200 400 600 800 1000 1200 0.001 0 Collector to emitter voltage VCE (V) Collector to emitter voltage VCE (V) Rth(t) -- t Ta=25C (1) Without heat sink (2) With a 100 x 80 x t2mm Al heat sink 30 (2) 10 (1) Thermal resistance Rth(t) (C/W) 3 1 0.3 0.3 1 3 10 30 100 300 Time t (s) 2 |
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